Journal
OPTICS EXPRESS
Volume 25, Issue 20, Pages 24705-24713Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.25.024705
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Funding
- National Natural Science Foundation of China [61534004, 61604112, 61622405]
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In this paper, we design the uniaxially and biaxially strained black phosphorus (BP) photodetectors. Different strains applied in the zigzag or armchair direction can effectively tune the direct band gap of 5-layer of BP. The optical field intensity is modeled to determine the absorption for the BP layer. The strain effect on the band structure of BP is investigated using first-principles method based on density functional theory. The cut-off wavelength of strained 5-layer of BP pin photodetector is extended to middle infrared range with a high responsivity of 66.29 A/W, which means that the strained black phosphorus photodetector provides a new approach for the middle-infrared range optoelectronic devices. (C) 2017 Optical Society of America
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