4.6 Article

High-speed near-field photolithography at 16.85 nm linewidth with linearly polarized illumination

Journal

OPTICS EXPRESS
Volume 25, Issue 15, Pages 17571-17580

Publisher

OPTICAL SOC AMER
DOI: 10.1364/OE.25.017571

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Funding

  1. National Natural Science Foundation of China (NSFC) [91623105, 91123033]
  2. State Key Laboratory of Tribology, China Tsinghua University [SKLTKF16B14]

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Plasmonic focusing was investigated in concentric rings with a central pillar under linearly polarized illumination with a specific incident angle. When changing the incident angle of linearly polarized beam between 6 and 15 degree away from the normal direction, the focal spot size can keep a steady value of 37 nm, smaller than the focal spot with the radially polarized beam at the same excited condition, 45 nm. Combining this with the highspeed near-field photolithography technology, we demonstrated a plasmonic lithography with 16.85 nm linewidth on both organic and inorganic photo-resists in large scale at scanning speeds up to 11.3 m/s. This inclined linearly polarized illumination is easy to realize in a prototype of near-field photolithography system, and it opens a new cost effective approach towards the next generation lithography for nano-manufacturing. (C) 2017 Optical Society of America

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