Journal
OPTICS EXPRESS
Volume 25, Issue 15, Pages 17322-17328Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.25.017322
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Funding
- MOST [2014CB339800, 2012YQ140005, 2015DFR50870]
- National Natural Science Foundation [61371035, 11227904, 61521001, 61501219, 61671234, 51572042]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Jiangsu Provincial Key Laboratory of the Advanced Manipulation of Electromagnetic Wave
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An active vanadium dioxide integrated metasurface offering broadband transmitted terahertz wave modulation with large modulation-depth under electrical control is demonstrated. The device consists of metal bias-lines arranged with grid-structure patterned vanadium dioxide (VO2) film on sapphire substrate. Amplitude transmission is continuously tuned from more than 78% to 28% or lower in the frequency range from 0.3 THz to 1.0 THz, by means of electrical bias at temperature of 68 degrees C. The physical mechanism underlying the device's electrical tunability is investigated and found to be attributed to the ohmic heating. The developed device possessing over 87% modulation depth with 0.7 THz frequency band is expected to have many potential applications in THz regime such as tunable THz attenuator. (C) 2017 Optical Society of America
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