Journal
OPTICAL MATERIALS
Volume 66, Issue -, Pages 351-355Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.optmat.2017.02.032
Keywords
Bi2+; Bi3+; Bi-pairs; YPO4; Electron trap; Hole trap
Categories
Funding
- Dutch Technology Foundation STW, Netherlands Organisation for Scientific Research
- Ministry of Economic Affairs
- Saint Gobain Crystals, France
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YPO4 doped with Bi3+ and/or Tb3+ samples were prepared in air. X-ray excited luminescence measurements showed emission from isolated Bi3+ and Bi-pairs, and also emission from Bi2+ was observed. Based on the obtained spectroscopic data, the electron binding energies in the ground and excited states of Bi3+ and Bi2+ were placed inside the vacuum referred binding energy (VRBE) scheme, and this was used to explain the luminescence of bismuth doped YPO4. The VRBE scheme and additional thermoluminescence glow curves show that bismuth can act both as electron and as hole trap in YPO4. (C) 2017 Elsevier B.V. All rights reserved.
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