Journal
JOURNAL OF MATERIALS CHEMISTRY A
Volume 6, Issue 43, Pages 21379-21388Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c8ta08033j
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Funding
- UGC JRF [F.19-1/2013(SA-I)]
- DST-SERB, Govt of India [YSS/2015/000651]
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In this work, a direct Z-scheme Cs2O-Bi2O3-ZnO heterostructure without any electron mediator is fabricated by a simple solution combustion route. Cs2O is chosen as a sensitizer to expand the light absorption range, and in addition, its conduction band minimum (CBM) and valence band maximum (VBM) positions are suitable to construct a direct Z-scheme system with ZnO and Bi2O3. Structural and elemental analyses show clear evidence for heterostructure formation. The Z-scheme charge carrier migration pathway in Cs2O-Bi2O3-ZnO is confirmed by high resolution XPS and ESR studies. The fabricated heterostructure exhibits a good ability to split water to H-2 and O-2 under simulated sunlight irradiation without any sacrificial agents or co-catalysts and has excellent photostability. The apparent quantum efficiency of the optimized Cs2O-Bi2O3-ZnO heterostructure reaches up to 0.92% at 420 nm. The excellent efficiency of this fabricated heterostructure is attributed to the efficient charge carrier separation, the high redox potential of the CBM and VBM benefiting from a direct Z-scheme charge carrier migration pathway and the extended light absorption range.
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