Journal
IEEE SOLID-STATE CIRCUITS LETTERS
Volume 1, Issue 12, Pages 233-236Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LSSC.2019.2899519
Keywords
Charge trap transistor (CTT); current sensing; non-volatile memory (NVM); one time programmable memory (OTPM); self-heating; twin cell
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An 8Kx192b charge trap transistor one time programmable memory (OTPM) is designed and manufactured in GLOBALFOUNDRIES 14-nm bulk FinFET technology without process adders or additional masks. A write timer state machine issues multicycle 192b parallel programming with per bit overwrite protection to minimize stress conditions during a write. On-chip generated voltages are temperature dependent, enabling writes and reads at military grade temperatures. A differential current sense amplifier with self-biased margining circuitry enables programming the OTPM twin cell with known repeatable margin across process-voltage-temperature. Hardware qualification certifies the OTPM to a 10-year 105 degrees C data retention specification and <3 PPM end of life bit error rate pre-ECC.
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