Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 18, Pages 9429-9435Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b01869
Keywords
graphene transistor; contact resistance; conformal transfer; CTLM; reproducible contact
Funding
- Philips Research
- Max-Planck Institute for Polymer Research (Mainz, Germany)
- Alexander von Humboldt Foundation
Ask authors/readers for more resources
Chemical vapor deposition (CVD) of graphene on top of metallic foils is a technologically viable method of graphene production. Fabrication of microelectronic devices with CVD grown graphene is commonly done by using photolithography and deposition of metal contacts on top of the transferred graphene layer. This processing is potentially invasive for graphene, yields large spread in device parameters, and can inhibit up-scaling. Here we demonstrate an alternative process technology in which both lithography and contact deposition on top of graphene are,prevented. First a prepatterned substrate is fabricated that contains all the device layouts, electrodes and interconnects. Then CVD graphene is transferred on top. Processing parameters are adjusted to yield a graphene layer that adopts the topography of the prepatterned substrate. The metal graphene contact Shows low contact resistances below 1 k Omega mu m for CVD graphene devices. The conformal transfer technique is scaled-up to 150 mm wafers with statistically similar devices and with a device yield close to unity.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available