InGaP solar cell as the top junction of a multiple junction device for spatial applications

Multiple quantum well structures have been proposed to form the intermediate junction of a triple junction solar cell to improve the efficiency of such devices. Such proposal requires new optimization of the InGaP top junction cell structure so as to reach a better current matching. In this work, numerical simulations were carried out and an optimized InGaP/InGaAIP is proposed to achieve the proper current matching. The solar cell has been grown and characterized. Although the measured short circuit current and efficiency are still well below the theoretically predicted values, processing improvement should lead to adequate cell performance.