Journal
ELECTRONICS LETTERS
Volume 51, Issue 11, Pages -Publisher
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2015.0770
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [24000013]
- Grants-in-Aid for Scientific Research [24000013] Funding Source: KAKEN
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The monolithic integration of four-colour indium gallium nitride (InGaN)-based nanocolumn light-emitting diodes (LEDs) is demonstrated. In the integrated nanocolumn LED unit, blue-, sky-blue-, green- and yellow-emitting micro-LEDs (LEDs 1-4) with a 65 mu m diameter circular indium tin oxide emission window were arrayed in a 2 x 2 square lattice with a lattice constant of 190 mu m. LEDs 1-4 consisted of nanocolumn arrays arranged in a triangular lattice with a lattice constant of 300 nm and their nanocolumn diameters at the position of the InGaN/gallium nitride (GaN) multiple quantum wells (MQWs) were 119, 145, 188 and 231 nm, respectively. The increase in nanocolumn diameter from LED 1 to LED 4 resulted in increasing emission peak wavelengths, which were 465, 489, 510 and 570 nm for LEDs 1-4, respectively. On the same substrate, a red-emitting micro-LED was prepared, in which the nanocolumn diameter was increased to 260 nm by using a 350 nm-lattice-constant nanocolumn array. A combination of different lattice constants in an integrated LED unit is expected to contribute to the achievement of red-green-blue-yellow (RGBY)-colour-integrated nanocolumn LEDs.
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