Journal
SEMICONDUCTORS
Volume 52, Issue 16, Pages 2092-2095Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S106378261816008X
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Funding
- government of the Russian Federation [3.9796.2017/8.9, 16.2593.2017/4.6]
- Russian Science Foundation [18-72-00231]
- Ministry of Education and Science of the Russian Federation [RFMEFI62117X0018]
- Russian Federation [MK-6492.2018.2]
- Russian Science Foundation [18-72-00231] Funding Source: Russian Science Foundation
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Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending on the growth condition has been observed. Effect of the V/III flux ratio on the growth mechanism, nanowire structure and morphology was studied by means of scanning electron microscopy and high resolution transmission electron microscopy.
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