Journal
NATURE PHOTONICS
Volume 11, Issue 6, Pages 366-371Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NPHOTON.2017.75
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Funding
- Spanish Ministry of Economy and Competitiveness, through the 'Severo Ochoa' Programme for Centres of Excellence in RD [SEV-2015-0522]
- Fundacio Cellex Barcelona
- CERCA Programme/Generalitat de Catalunya
- Government of Catalonia through the SGR grant [2014-SGR-1535]
- Ajuntament de Barcelona
- European Union Seventh Framework Programme [696656]
- ERC Proof-of-concept GRAQUADOT [620233]
- Spanish Ministry of Economy and Competitiveness (MINECO)
- 'Fondo Europeo de Desarrollo Regional' (FEDER) [MAT2014-56210-R]
- AGAUR under the SGR [2014SGR1548]
- European Research Council (ERC) [620233] Funding Source: European Research Council (ERC)
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Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.
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