4.8 Article

Tunable room-temperature magnetic skyrmions in Ir/Fe/Co/Pt multilayers

Journal

NATURE MATERIALS
Volume 16, Issue 9, Pages 898-+

Publisher

NATURE PORTFOLIO
DOI: 10.1038/NMAT4934

Keywords

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Funding

  1. Singapore Ministry of Education (MoE), Academic Research Fund Tier 2 [MOE2014-T2-1-050]
  2. National Research Foundation (NRF) of Singapore, NRF - Investigatorship [NRF-NRFI2015-04]
  3. A* STAR Pharos Fund of Singapore [1527400026]
  4. Leading Foreign Research Institute Recruitment Program through the National Research Foundation (NRF) of Korea - Ministry of Education, Science and Technology (MEST) [2012K1A4A3053565]
  5. DGIST R&D programme of the Ministry of Science, ICT and future Planning [17-BT-02]
  6. Office of Science, Office of Basic Energy Sciences, Scientific User Facilities Division of the US Department of Energy [DE-AC02-05CH11231]
  7. National Research Foundation of Korea [2012K1A4A3053565] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Magnetic skyrmions are nanoscale topological spin structures offering great promise for next-generation information storage technologies. The recent discovery of sub-100-nm room-temperature (RT) skyrmions in several multilayer films has triggered vigorous efforts to modulate their physical properties for their use in devices. Here we present a tunable RT skyrmion platform based on multilayer stacks of Ir/ Fe/ Co/ Pt, which we study using X-ray microscopy, magnetic force microscopy and Hall transport techniques. By varying the ferromagnetic layer composition, we can tailor the magnetic interactions governing skyrmion properties, thereby tuning their thermodynamic stability parameter by an order of magnitude. The skyrmions exhibit a smooth crossover between isolated (metastable) and disordered lattice configurations across samples, while their size and density can be tuned by factors of two and ten, respectively. We thus establish a platform for investigating functional sub-50-nm RT skyrmions, pointing towards the development of skyrmion-based memory devices.

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