Journal
ELECTRONIC MATERIALS LETTERS
Volume 11, Issue 3, Pages 398-403Publisher
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-015-4388-3
Keywords
GaN; nanostructures; nitridation; MBE; photoluminescence
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- DST
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Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications.
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