Journal
ELECTRONIC MATERIALS LETTERS
Volume 11, Issue 2, Pages 241-245Publisher
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-014-4190-7
Keywords
organic capacitor; leakage current; thin insulator; tunneling current
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Funding
- Business for Cooperative R&D between Industry, Academy, and Research Institute [C0200437]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2013R1A1A4A01009807]
- National Research Foundation of Korea [2013R1A1A4A01009807] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This is a systematic study of how leakage current behaviors are affected according to the capacitor structures. We fabricated two types of capacitors, a metal-insulator-metal (MIM) capacitor and a metal-insulator-organic semiconductor-metal (MISM) capacitor with an ultra-thin AlOx insulator. In the MINA capacitors, the Fermi-level alignment induced by the difference of the work functions between the top and bottom electrodes leads to the polarity dependence of the leakage current features. In contrast, for the MISM organic capacitors, it is found that the type of organic semiconductor dominantly determines the characteristics of the polarity dependence. These structure-dependent differences of leakage current in a fundamental constituent of the capacitor provide a scientific platform for designing more complex devices for precise operation.
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