Journal
NANOTECHNOLOGY
Volume 28, Issue 21, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa6d98
Keywords
two-dimensional materials; molybdenum disulfide (MoS2); phototransistor; persistent photoconductivity; charge trapping; photogating; space charge limited conduction
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We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10(4) s, due to photo-charge trapping at the MoS2/SiO2 interface and in MoS2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 k Omega mu m(-1), ON current as high as 1.25 nA mu m(-1), 10(5) ON-OFF ratio, mobility of similar to 1 cm(2) V-1 s(-1) and photoresponsivity. R approximate to 1 AW(-1).
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