Journal
NANOTECHNOLOGY
Volume 28, Issue 14, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa60f9
Keywords
transition metal dichalcogenides; molybdenum disulphide; electrical noise; percolation behavior; disordered system; chemical vapor deposition
Funding
- National Creative Research Laboratory program - Korean Ministry of Science, ICT & Future Planning [2012026372]
- Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the US Department of Energy [DE-AC02-05CH11231]
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We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD). A large number of trap states were produced during the CVD process of synthesizing MoS2, resulting in a disordered monolayer MoS2 system. The interface trap density between CVDgrown MoS2 and silicon dioxide was extracted from the McWhorter surface noise model. Notably, generation-recombination noise which is attributed to charge trap states was observed at the low carrier density regime. The relation between the temperature and resistance following the power law of a 2D inverted-random void model supports the idea that disordered CVDgrown monolayer MoS2 can be analyzed using a percolation theory. This study can offer a viewpoint to interpret synthesized low-dimensional materials as highly disordered systems.
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