Journal
NANOTECHNOLOGY
Volume 28, Issue 13, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa5f0d
Keywords
attachability; flexibility; resistive memory; non-volatility; negative resistance
Funding
- National Creative Research Laboratory Program National Research Foundation of Korea (NRF) [2012026372]
- Korean Ministry of Science, ICT & Future Planning
- National Research Foundation of Korea [2012R1A3A2026372] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We fabricated 8 x 8 arrays of non-volatile resistive memory devices on commercially available Scotch (R) Magic (TM) tape as a flexible substrate. The memory devices consist of double active layers of Al2O3 with a structure of Au/Al2O3/Au/Al2O3/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at similar to 3.5 V and turned to the high resistance state at similar to 10 V with a negative differential resistance region after similar to 5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 10(4), endurance over 200 cycles of reading/writing processes, and retention times of over 10(4) s in both the flat and bent configurations.
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