Journal
NANOTECHNOLOGY
Volume 28, Issue 17, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa651c
Keywords
amorphous; nanocrystalline; oxide semiconductor; thin film transistor; charge trapping; fast transient charging; mobility
Funding
- asic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology (MSIP) [NRF-2014R1A6A1030732, 2015M3A7B7045496]
- Technology Innovation Program - Ministry of Trade, Industry & Energy (MOTIE, Korea) [10049163]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10049163] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Amorphous oxide semiconductor thin-film transistors (TFT) have been considered as outstanding switch devices owing to their high mobility. However, because of their amorphous channel material with a certain level of density of states, a fast transient charging effect in an oxide TFT occurs, leading to an underestimation of the mobility value. In this paper, the effects of the fast charging of high-performance bilayer oxide semiconductor TFTs on mobility are examined in order to determine an accurate mobility extraction method. In addition, an approach based on a pulse I-D-V-G measurement method is proposed to determine the intrinsic mobility value. Even with the short pulse I-D-V-G measurement, a certain level of fast transient charge trapping cannot be avoided as long as the charge-trap start time is shorter than the pulse rising time. Using a pulse-amplitude-dependent threshold voltage characterization method, we estimated a correction factor for the apparent mobility, thus allowing us to determine the intrinsic mobility.
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