Journal
NANOTECHNOLOGY
Volume 28, Issue 46, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa8b60
Keywords
metalorganic molecular beam epitaxy; selective epitaxy; gallium phosphide; nanowire; wurtzite; transmission electron microscopy
Funding
- Russell Berrie Nanotechnology Institute (RBNI)
Ask authors/readers for more resources
We report on the growth of single phase wurtzite (WZ) GaP nanowires (NWs) on GaP (111) B substrates by metal organic molecular beam epitaxy following the selective area vapor-liquid-solid (SA-VLS) approach. During the SA-VLS process, precursors are supplied directly to the NW sidewalls, and the short diffusion length of gallium (or its precursors) does not significantly limit axial growth. Transmission electron microscopy (TEM) images reveal that no stacking faults are present along a 600 nm long NW. The lattice constants of the pure WZ GaP obtained from the TEM images agree with values determined previously by x-ray diffraction from non-pure NW ensembles.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available