Journal
NANOSCALE RESEARCH LETTERS
Volume 12, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-017-1925-z
Keywords
Ni nanoparticles; Plasma-assisted atomic layer deposition; In-Ga-Zn-O; Memory
Funding
- National Natural Science Foundation of China [61474027, 61274088]
- National Key Technologies R&D Program of China [2015ZX02102-003]
Ask authors/readers for more resources
For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 degrees C substrate temperature and 50 deposition cycles, exhibiting a density of similar to 1.5 x 10(12) cm(-2) and a small size of 3 similar to 4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available