Journal
NANOSCALE RESEARCH LETTERS
Volume 12, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-017-2115-8
Keywords
GaN barrier; Hydrogen; Surface; Interface
Funding
- National Natural Science Foundation of China [61504090, 21471111, 61604104]
- Applied Basic Research Projects of Shanxi Province [2016021028]
- National Key R&D Program of China [2016YFB0401803]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [201605D131045-10]
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Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H-2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H-2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H-2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H-2 proportion further increases, stress relaxation and H-2 over-etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.
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