Journal
NANOSCALE RESEARCH LETTERS
Volume 12, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-017-2109-6
Keywords
InGaN; Hydrogen; Treatment temperature; Multiple quantum wells
Funding
- National Natural Science Foundation of China [61504090, 21471111, 61604104]
- Applied Basic Research Projects of Shanxi Province [2016021028]
- National Key R&D Program of China [2016YFB0401803]
- Shanxi Provincial Key Innovative Research Team in Science and Technology [201605D131045-10]
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InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 degrees C improves surface and interface qualities of MQWs, as well as significantly enhances room temperature photoluminescence (PL) intensity. In contrast, the sample with hydrogen treatment at 730 degrees C shows no improvement, as compared with the reference sample without hydrogen treatment. On the basis of temperature-dependent PL characteristics analysis, it is concluded that hydrogen treatment at 850 degrees C is more effective in reducing defect-related non-radiative recombination centers in MQWs region, yet has little impact on carrier localization. Hence, hydrogen treatment temperature is crucial to improving the quality of InGaN/GaN MQWs.
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