Journal
NANOSCALE RESEARCH LETTERS
Volume 12, Issue -, Pages -Publisher
SPRINGEROPEN
DOI: 10.1186/s11671-017-2024-x
Keywords
ZrO2; GaN; MOS; Atomic layer deposition; Post-annealing
Funding
- NSFC [11574235]
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GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 degrees C. A minimum leakage current density of 3 x 10(-9) A/cm(2) at 1 V was obtained when O-3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.
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