Journal
NANOSCALE RESEARCH LETTERS
Volume 12, Issue -, Pages -Publisher
SPRINGER
DOI: 10.1186/s11671-017-2197-3
Keywords
Silicon nanowires; Electroless etching; Microstructures; Reflectance; Band gap energy; Resistivity
Funding
- Deanship of Scientific Research, Jazan University, Jazan, Saudi Arabia [36/6/3693]
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Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I-V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Omega cm.
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