Journal
NANOSCALE
Volume 9, Issue 24, Pages 8142-8148Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c7nr01290j
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Funding
- National Natural Science Foundation of China [11574306]
- National Basic Research and High Technology Program of China [2015AA03A101, 2014CB643903, 2014BAK02B08, 2015AA033303]
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Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous GaN. The specific detectivity of our devices under UV-illumination reaches values of up to 5.3 x 10(14) Jones. We attribute this high specific detectivity to the properties of the mesoporous GaN/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain. High detectivity along with a simple fabrication process endows these laterally mesoporous GaN photodetectors with great potential for applications that require selective detection of weak optical signals in the UV range.
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