Related references
Note: Only part of the references are listed.Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies (vol 15, pg 48, 2016)
Hong Li et al.
NATURE MATERIALS (2016)
Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
Ankur Nipane et al.
ACS NANO (2016)
p-Type MoS2 and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect
Fei Xue et al.
ADVANCED MATERIALS (2016)
P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor
Xiaochi Liu et al.
ADVANCED MATERIALS (2016)
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2
Brahim Akdim et al.
NANOTECHNOLOGY (2016)
Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2
Y. Kim et al.
SCIENTIFIC REPORTS (2016)
Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies
Hong Li et al.
NATURE MATERIALS (2016)
Single-Layer MoS2 Electronics
Dominik Lembke et al.
ACCOUNTS OF CHEMICAL RESEARCH (2015)
Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption
Dong Min Sim et al.
ACS NANO (2015)
Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati et al.
ACS NANO (2015)
Controlled Doping of Large-Area Trilayer MoS2 with Molecular Reductants and Oxidants
Alexey Tarasov et al.
ADVANCED MATERIALS (2015)
Nb-doped single crystalline MoS2 field effect transistor
Saptarshi Das et al.
APPLIED PHYSICS LETTERS (2015)
Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules
Jong Hun Kim et al.
APPLIED PHYSICS LETTERS (2015)
Manganese Doping of Monolayer MoS2: The Substrate Is Critical
Kehao Zhang et al.
NANO LETTERS (2015)
Two-dimensional materials and their prospects in transistor electronics
F. Schwierz et al.
NANOSCALE (2015)
Layer-controlled CVD growth of large-area two-dimensional MoS2 films
Jaeho Jeon et al.
NANOSCALE (2015)
Tuning the threshold voltage of MoS2 field-effect transistors via surface treatment
Wei Sun Leong et al.
NANOSCALE (2015)
Ab initio tight-binding Hamiltonian for transition metal dichalcogenides
Shiang Fang et al.
PHYSICAL REVIEW B (2015)
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2
In Soo Kim et al.
ACS NANO (2014)
Defect-Dominated Doping and Contact Resistance in MoS2
Stephen McDonnell et al.
ACS NANO (2014)
Monolayer MoS2 Heterojunction Solar Cells
Meng-Lin Tsai et al.
ACS NANO (2014)
Few-Layer MoS2: A Promising Layered Semiconductor
Rudren Ganatra et al.
ACS NANO (2014)
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
Deep Jariwala et al.
ACS NANO (2014)
p-type doping of MoS2 thin films using Nb
Masihhur R. Laskar et al.
APPLIED PHYSICS LETTERS (2014)
Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
Hennrik Schmidt et al.
NANO LETTERS (2014)
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
Joonki Suh et al.
NANO LETTERS (2014)
Confocal absorption spectral imaging of MoS2: optical transitions depending on the atomic thickness of intrinsic and chemically doped MoS2
Krishna P. Dhakal et al.
NANOSCALE (2014)
First-principles Raman spectra of MoS2, WS2 and their heterostructures
Liangbo Liang et al.
NANOSCALE (2014)
Valley-dependent spin polarization in bulk MoS2 with broken inversion symmetry
R. Suzuki et al.
NATURE NANOTECHNOLOGY (2014)
Electronics based on two-dimensional materials
Gianluca Fiori et al.
NATURE NANOTECHNOLOGY (2014)
Spin and pseudospins in layered transition metal dichalcogenides
Xiaodong Xu et al.
NATURE PHYSICS (2014)
Stability and electronic structures of native defects in single-layer MoS2
Ji-Young Noh et al.
PHYSICAL REVIEW B (2014)
The valley Hall effect in MoS2 transistors
K. F. Mak et al.
SCIENCE (2014)
Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Sheneve Z. Butler et al.
ACS NANO (2013)
Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping
Mikai Chen et al.
APPLIED PHYSICS LETTERS (2013)
Sulfur vacancies in monolayer MoS2 and its electrical contacts
D. Liu et al.
APPLIED PHYSICS LETTERS (2013)
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
Deep Jariwala et al.
APPLIED PHYSICS LETTERS (2013)
Bandgap Engineering of Strained Monolayer and Bilayer MoS2
Hiram J. Conley et al.
NANO LETTERS (2013)
Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating
Sefaattin Tongay et al.
NANO LETTERS (2013)
Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
Shinichiro Mouri et al.
NANO LETTERS (2013)
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Manish Chhowalla et al.
NATURE CHEMISTRY (2013)
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
Sina Najmaei et al.
NATURE MATERIALS (2013)
Ultrasensitive photodetectors based on monolayer MoS2
Oriol Lopez-Sanchez et al.
NATURE NANOTECHNOLOGY (2013)
Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
Sanfeng Wu et al.
NATURE PHYSICS (2013)
Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2
C. Rice et al.
PHYSICAL REVIEW B (2013)
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
C. R. Zhu et al.
PHYSICAL REVIEW B (2013)
Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2 systems
Y. C. Cheng et al.
PHYSICAL REVIEW B (2013)
Possible doping strategies for MoS2 monolayers: An ab initio study
Kapildeb Dolui et al.
PHYSICAL REVIEW B (2013)
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons
Sefaattin Tongay et al.
SCIENTIFIC REPORTS (2013)
From Bulk to Monolayer MoS2: Evolution of Raman Scattering
Hong Li et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
Yu-Chuan Lin et al.
NANOSCALE (2012)
Valley polarization in MoS2 monolayers by optical pumping
Hualing Zeng et al.
NATURE NANOTECHNOLOGY (2012)
Control of valley polarization in monolayer MoS2 by optical helicity
Kin Fai Mak et al.
NATURE NANOTECHNOLOGY (2012)
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Qing Hua Wang et al.
NATURE NANOTECHNOLOGY (2012)
Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
Biswanath Chakraborty et al.
PHYSICAL REVIEW B (2012)
Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides
Di Xiao et al.
PHYSICAL REVIEW LETTERS (2012)
Large-Area Vapor-Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate
Yongjie Zhan et al.
SMALL (2012)
Valley-selective circular dichroism of monolayer molybdenum disulphide
Ting Cao et al.
NATURE COMMUNICATIONS (2012)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Anomalous Lattice Vibrations of Single- and Few-Layer MoS2
Changgu Lee et al.
ACS NANO (2010)
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani et al.
NANO LETTERS (2010)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)
Fullerene-like (IF) NbxMo1-xS2 nanoparticles
Francis Leonard Deepak et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2007)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Solution-processed anodes from layer-structure materials for high-efficiency polymer light-emitting diodes
GL Frey et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2003)
Inorganic solution-processed hole-injecting and electron-blocking layers in polymer light-emitting diodes
KJ Reynolds et al.
JOURNAL OF APPLIED PHYSICS (2002)
Share Paper
