3.8 Proceedings Paper

Investigation of Sputtered Oxides and p+ Back-contact for Polycrystalline CdTe and CdSeTe Photovoltaics

Publisher

IEEE

Keywords

Cadmium compounds; photovoltaic cells; aluminum compounds; II-VI semiconductors materials; solar energy

Funding

  1. NSF's Accelerating Innovation Research, DOE's SIPS
  2. NSF's Industry/University Cooperative Research Center programs

Ask authors/readers for more resources

Adding a thin layer of Al2O3 to the back of CdSeTe/CdTe devices has previously been shown to passivate the back interface and drastically improve surface recombination lifetimes. Using such a structure, lifetimes of over 400 ns have been recorded. Despite this, such devices do not currently show an improvement in open-circuit voltage (VOC) that is commensurate with this effect. Devices were fabricated using a range of Al2O3 thicknesses at the back interface. High efficiency devices exceeding 16.4% were fabricated with 0.5 nm Al2O3.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

3.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available