4.8 Article

Oxygen-suppressed selective growth of monolayer hexagonal boron nitride on copper twin crystals

Journal

NANO RESEARCH
Volume 10, Issue 3, Pages 826-833

Publisher

TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-016-1338-9

Keywords

monolayer hexagonal boron nitride; copper twin crystals; oxygen; selectivity; chemical vapor deposition

Funding

  1. National Basic Research Program of China [2013CB932604, 2012CB933403]
  2. National Natural Science Foundation of China [51535005, 51472117, 11472131, 11622218]
  3. Jiangsu Natural Science Foundation [BK20130781, BK20160037]
  4. Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures [MCMS-0416K01, MCMS-0416G01, 0414K01]
  5. Nanjing University of Aeronautics and Astronautics (NUAA) Fundamental Research Funds [NP2015203, NS2014012]
  6. Jiangsu Innovation Program for Graduate Education [CXZZ13_0150]
  7. Priority Academic Program Development of Jiangsu Higher Education Institutions

Ask authors/readers for more resources

Controlled growth of hexagonal boron nitride (h-BN) with desired properties is essential for its wide range of applications. Here, we systematically carried out the chemical vapor deposition of monolayer h-BN on Cu twin crystals. It was found that h-BN nucleated and grew preferentially and simultaneously on the narrow twin crystal strips present in the Cu substrates. The density functional theory calculations revealed that the introduction of oxygen could efficiently tune the selectivity. This is because of the reduction in the dehydrogenation barrier of the precursor molecules by the introduction of oxygen. Our findings throw light on the direct growth of functional h-BN nanoribbons on nano-twinned crystal strips and switching of the growth behavior of h-BN films by oxygen.

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