Journal
NANO RESEARCH
Volume 10, Issue 7, Pages 2459-2470Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1449-y
Keywords
memristor; memristive logic circuit; flexible nonvolatile logic-in-memory circuit; normally-off computing; memristor-aided logic (MAGIC) architecture
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Funding
- Global Frontier Center for Advanced Soft Electronics [2011-0031640]
- Creative Research Program of the ETRI [15ZE1110]
- Wearable Platform Materials Technology Center (WMC) - National Research Foundation of Korea (NRF) Grant of the Korean Government (MSIP) [2016R1A5A1009926]
- Samsung Research Funding Center of Samsung Electronics [SRFC-MA1402-04]
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Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we show that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based memristor array. Although memristive logic-in-memory circuits have been previously reported, the requirements of additional components and the large variation of memristors have limited demonstrations to simple gates within a few operation cycles on rigid substrates only. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on a flexible substrate, for the first time, we experimentally demonstrated our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within a crossbar array. This research advances the development of novel computing architecture with zero static power consumption for battery-powered flexible electronic systems.
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