Journal
NANO RESEARCH
Volume 10, Issue 11, Pages 3848-3856Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-017-1598-z
Keywords
black phosphorus; zinc oxide; light induced dopant; photovoltaics
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Funding
- National Basic Research Program of China (973 Program) [2012CB932402]
- National Natural Science Foundation of China [91123005, 61674108]
- Jiangsu Key Laboratory for Carbon-Based Functional Materials Devices
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Collaborative Innovation Centre of Suzhou Nano Science and Technology
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In conventional crystalline silicon (Si) homojunction solar cells, a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes. However, this technique involves an energy intensive, high temperature (similar to 800 degrees C) process and toxic doping materials. Black phosphorus (BP) is a two-dimensional, narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties. Here, we place BP: zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact. Once the BP harvests photons with energies below 1.1 eV from the crystalline Si, the ZnO carrier concentration increases dramatically due to charge injection. This photo-induced doping results in a high carrier concentration in the ZnO film, mimicking the modulated doping technique used in semiconductor heterojunctions. We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films, thus reducing the contact resistance between Si and Al. A photovoltaic power conversion efficiency of 15.2% is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer. These findings demonstrate an effective way of improving Si/metal contact via a simple, low temperature process.
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