Journal
NANO LETTERS
Volume 17, Issue 10, Pages 6353-6359Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03140
Keywords
Black phosphorus; graphene; memory; Schottky junction; two-dimensional materials
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Funding
- Natural Science Foundation of Shanghai [16ZR1439400, 17ZR1447700]
- Fundamental Research Funds for the Central Universities
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The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.
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