Journal
NANO LETTERS
Volume 17, Issue 12, Pages 7394-7400Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03220
Keywords
Silicon quantum photonics; hybrid integration; quantum dots; single photons
Categories
Funding
- Laboratory for Telecommunication Sciences
- Center for Distributed Quantum Information at the University of Maryland
- Army Research Laboratory
- Physics Frontier Center at the Joint Quantum Institute
- Direct For Mathematical & Physical Scien
- Division Of Physics [1430094] Funding Source: National Science Foundation
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Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.
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