4.8 Article

Ultrafast Broadband Photodetectors Based on Three-Dimensional Dirac Semimetal Cd3As2

Journal

NANO LETTERS
Volume 17, Issue 2, Pages 834-841

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b04084

Keywords

Dirac semimetal; photodetector; ultrafast; photothermoelectric effect; topological materials

Funding

  1. National Key Research and Development Program of China [2016YFA0300802]
  2. National Basic Research Program of China (973) [2014CB920900, 2012CB921300]
  3. National Natural Science Foundation of China (NSFC) [11674013, 11274015]
  4. Recruitment Program of Global Experts
  5. Beijing Natural Science Foundation [4142024]

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Photodetection with extreme performances in terms of ultrafast response time, broad detection wavelength range, and high sensitivity has a wide range of optoelectronic and photonic applications, such as optical communications, interconnects, imaging, and remote sensing. Graphene, a typical two-dimensional Dirac semimetal, has shown excellent potential toward a high-performance photodetector with high operation speed, broadband response, and efficient carrier multiplications benefiting from its linear dispersion band structure with a high carrier mobility and zero bandgap. As the three-dimensional analogues of graphene, Dirac semimetal Cd3As2 processes all advantages of graphene as a photosensitive material but potentially has stronger interaction with light as a bulk material and thus enhanced responsivity. In this work, we report the realization of an ultrafast broadband photodetector based on Cd3As2. The prototype metal-Cd3As2-metal photodetector exhibits a responsivity of 5.9 mA/W with a response time of about 6.9 ps without any special device optimization. Broadband responses from 532 nm to 10.6 mu m are achieved with a potential detection range extendable to far-infrared and terahertz. Systematical studies indicate that the photothermoelectric effect plays an important role in photocurrent generation. Our results suggest this emerging class of exotic quantum materials can be harnessed for photodetection with a high sensitivity and high speed (similar to 445 GHz) over a broad wavelength range.

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