Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Transitional metal ditelluride WTe2 has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe2. Here, we report a successful synthesis of mono-to few-layer WTe2 via chemical vapor deposition. Using atomically thin WTe2 nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe2 from weak B (T) antilocalization to weak localization, revealing a strong electrical field modulation of the spin-Orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe2 as a promising platform for exotic electronic and spintronic device applications.