Journal
NANO LETTERS
Volume 17, Issue 9, Pages 5244-5250Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b01360
Keywords
Nanowire laser; nanobeam; telecom wavelength; room temperature; monolithic integration
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Funding
- AFOSR [FA9550-15-1-0324]
- Sre Cymru National Research Network in Advanced Engineering and Materials
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Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.
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