Journal
NANO LETTERS
Volume 17, Issue 2, Pages 946-952Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.6b04291
Keywords
GaN; wire; doping; polarity; synchrotron; nanoprobe
Categories
Funding
- French Laboratory of Excellence GANEX [ANR-11-LABX-2014]
- CSIC
- MINECO [2016601001]
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Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Owing to the critical role of silane injection in creating nanosized architectures, it has become a challenge to investigate the induced local lattice polarity in single GaN wires. Thus, if axial and radial structures are well-grown by a silane-mediated approach, an ideal model to study their polar orientations is formed. By combining synchrotron X-ray fluorescence and X-ray excited optical luminescence, we show here experimental evidence of the role of silane to promote the N-polarity, light emission, and elemental incorporation within single wires. In addition, our experiment demonstrates the ability to spatially examine carrier diffusion phenomena without electrical contacts, opening new avenues for further studies with simultaneous optical and elemental sensitivity at the nanoscale.
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