Journal
NANO LETTERS
Volume 17, Issue 10, Pages 6443-6452Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.7b03435
Keywords
Textile memristor; fabric; fibertronics; initiated chemical vapor deposition method; solution dip coating method
Categories
Funding
- Center for Integrated Smart Sensors - Ministry of Science, ICT & Future Planning as Global Frontier Project [CISS-2011-0031848]
- Pioneer Research Center Program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2012-0009600]
- NRF (National Research Foundation of Korea) Grant - Korea Government [NRF-2014H1A2A1022137, 2017H1A2A1042274]
- IDEC (EDA Tool, MPW)
- Global Frontier Center for Advanced Soft Electronics [2011-0031640]
- Wearable Platform Materials Technology Center (WMC) - NRF Grant of the Korean Government (MSIP) [2016R1A5A1009926]
- National Research Foundation of Korea [2012-0009600, 2011-0031848, 2017H1A2A1042274, 2011-0031640] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Fabric-based electronic textiles (e-textiles) are the fundamental components of wearable electronic systems, which can provide convenient hand-free access to computer and electronics applications. However, e-textile technologies presently face significant technical challenges. These challenges include difficulties of fabrication due to the delicate nature of the materials, and limited operating time, a consequence of the conventional normally on computing architecture, with volatile power-hungry electronic components, and modest battery storage. Here, we report a novel poly(ethylene glycol dimethacrylate) (pEGDMA)textile memristive nonvolatile logic-in-memory circuit, enabling normally off computing, that can overcome those challenges. To form the metal electrode and resistive switching layer, strands of cotton yarn were coated with aluminum (Al) using a solution dip coating method, and the pEGDMA was conformally applied using an initiated chemical vapor deposition process. The intersection of two Al/pEGDMA coated yarns becomes a unit memristor in the lattice structure. The pEGDMA-Textile Memristor (ETM), a form of crossbar array, was interwoven using a grid of Al/pEGDMA coated yarns and untreated yarns. The former were employed in the active memristor and the latter suppressed cell-to-cell disturbance. We experimentally demonstrated for the first time that the basic Boolean functions, including a half adder as well as NOT, NOR, OR, AND, and NAND logic gates, are successfully implemented with the ETM crossbar array on a fabric substrate. This research may represent a breakthrough development for practical wearable and smart fibertronics.
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