Journal
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
Volume 676, Issue 1, Pages 95-104Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/15421406.2019.1596208
Keywords
ITO-graphene-ITO; transmittance; conductivity; Raman spectra
Funding
- Industrial Human Resources and Skill Development Program by the Ministry of Trade, Industry, and Energy (MOTIE, Korea) [N0001415]
- Korea Evaluation Institute of Industrial Technology (KEIT) [N0001415] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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To obtain high transparecy conductive films (TCFs), graphene embedded indium tin oxide (ITO) TCFs (ITO-graphene-ITO) were formed (I-G-I), using ITO sputtering, and the exfoliation/transfer process of chemical vapor deposition (CVD) grown graphene. Compared with ITO-graphene (I-G), I-G-I TCFs showed degradation in transmittance, and in figure of merits(FOM) despite enhanced conductivity. After annealing, both transmittance and conductivity improved; however, were not dependent on the embedded graphene multilayers in the I-G-I structure. From the Raman spectra results, it was possible to investigate degradation of the graphene layers' 2D structures, caused by sputtering damage which occurred during the deposition of ITO onto the I-G structure.
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