Study of high-overtone bulk acoustic resonators based on the Me1/AlN/Me2/(100) diamond piezoelectric layered structure

The Me1/AlN/Me2/(100) diamond structure has been theoretically analyzed and experimentally investigated in the range 0.5-10 GHz using high-overtone bulk acoustic resonators with different electrodes topologies based on the Al/AlN/Mo/(100) diamond structure. The maximum quality parameter Q x f a parts per thousand 10(14) Hz was obtained at f = 9.5 GHz. The layered structure has been analyzed using the developed HBAR software v. 2.3. It is demonstrated that the features in the frequency dependences of the parameters of such resonators are related to the behavior of a loaded thin-film piezoelectric transducer. The calculation results are in good agreement with the experiment. The frequency dependences of the equivalent parameters of the resonators have been calculated. It is shown that the synthetic type IIa diamond single crystal in combination with aluminum nitride is promising for implementation of high-Q acoustoelectronic microwave devices.