Multistate Logic Inverter Based on Black Phosphorus/SnSeS Heterostructure

van der Waals (vdW) heterostructures have attracted intensive attention due to their great potential in future functional electronic and optoelectronic devices. Here, a systematic electrical transport investigation on black phosphorus (BP)/SnSeS heterostructures is presented. The BP/SnSeS heterostructure shows diverse diode functional features by modulating BP channel length and back-gate modulation, which is closely associated with the carrier tunneling at the heterojunction interface. The performances of the logic inverter based on the BP/SnSeS heterojunction are effectively enhanced by increasing the source voltage, and a middle state is observed with the increase of BP channel length. These findings could stimulate further research activities on vdW heterostructures for multiple functionality devices.