Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 37, Issue 1, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.5042540
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Funding
- U.S. Department of Energy [DE-AC05-76RL01830]
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Long-distance quantum communication relies on the ability to efficiently generate and prepare single photons at telecom wavelengths. Low-density InAs quantum dots on InP surfaces are grown in a molecular beam epitaxy system using a modified Stranski-Krastanov growth paradigm. This material is a source of bright and indistinguishable single photons in the 1.3 mu m telecom band. Here, the exploration of the growth parameters is presented as a phase diagram, while low-temperature photoluminescence and atomic resolution images are presented to correlate structure and spectral performance. This work identifies specific stacking faults and V-shaped defects that are likely causes of the observed low brightness emission at 1.55 mu m telecom wavelengths. The different locations of the imaged defects suggest possible guidance for future development of InAs/InP single photon sources for c-band, 1.55 mu m wavelength telecommunication systems.
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