Journal
MICROELECTRONICS RELIABILITY
Volume 76, Issue -, Pages 588-591Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.07.005
Keywords
Laser diode; Catastrophic optical damage; Thermal conductivity; Single quantum well; Multiple quantum wells; Finite element methods
Funding
- Spanish Government [ENE2014-56069-C4-4-R]
- Junta de Castilla y Leon [VA293U13, VA081U16]
- FPU programme of the Spanish Government [FPU14/00916]
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The catastrophic degradation of laser diodes with active zones comprising either single (SQW) or multiple quantum wells (MQW) has been analysed via finite element methods. This analysis is based on a physical model that explicitly considers the thermal and mechanical properties of the diode laser structure and the relevant size effects associated with the small thickness of the active layers of the device. The reduced thermal conductivities and the thermal barriers at the interfaces result in a significant local heating process which is accentuated as more quantum wells form the active part of the device. Therefore, in the design of high power devices, the SQW configuration would be more appropriate than the MQW alternative. (C) 2017 Elsevier Ltd. All rights reserved.
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