Journal
MICROELECTRONICS RELIABILITY
Volume 75, Issue -, Pages 9-13Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.06.003
Keywords
Room temperature RF sputtering; HfO2 and HIZO thin films; Bias stress stability
Funding
- CONACyT [237213, CB-2014/240103]
- PRODEP Tematic Network Desarrollo de Nuevos Dispositivos de Estado Solid y sus Aplicaciones under the project Estudio de Dispositivos Electronicos y Electromecanicos con Potencial Aplicacion en Fisiologia y Optoelectronica in Mexico
Ask authors/readers for more resources
MIS structures using HfO2 and HIZO layers, both deposited by room temperature RF magnetron sputtering are fabricated for TFTs application and characterized using capacitance-voltage. The relative dielectric constant obtained at 1 kHz was 11, the charge carrier concentration of the HIZO was in the range of (2-3) x 10(18) cm(-3) and the interface trap density at flat band was smaller than 2 x 10(12) cm(-2). The critical electric field of the HfO2 layer was higher than 5 x 10(5) V/cm, with a current density in the operating voltage range below 4 x 10(-8) A/cm(2). The hysteresis and bias stress behavior of RF-sputtered HfO2/HIZO MIS structures is presented. Fabricated HfO2/HIZO TFTs worked in the operation voltage range below 8 V. (C) 2017 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available