Journal
MICROELECTRONICS RELIABILITY
Volume 78, Issue -, Pages 362-369Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2017.09.003
Keywords
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Funding
- National Natural Science Foundation of China [61431014]
- Zhejiang Provincial Natural Science Foundation of Chin [LZ14F010001]
- Shanghai Academy of Spaceflight Technology [SAST2016059]
- State Key Lab Fund of the Complex Electromagnetic Environment Effects on Electronics Information System (CEMEE SKL)
- Science Challenge Project [JCKY20162 12A502]
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Multiple-gate (MG) MOSFETs are promising candidates for next-generation integrated circuits technology. This paper presents the electrothermal characterization of three-type nanoscale MG MOSFETs, i.e., Pi-gate, quadruple-gate (QG), and Omega-gate MOSFETs. Meanwhile, the temperature distribution of a real Omega-gate MOSFET with gradual channel width is also studied. Finite difference method (FDM) is adopted to solve the 3-D time-dependent heat conduction equations. The simulation results of the steady-state temperature distribution are validated against the commercial software COMSOL. Moreover, the transient temperature response of MG MOSFETs to different waveforms are also captured and compared. (C) 2017 Published by Elsevier Ltd.
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