Journal
MICROELECTRONICS INTERNATIONAL
Volume 34, Issue 2, Pages 64-68Publisher
EMERALD GROUP PUBLISHING LTD
DOI: 10.1108/MI-12-2015-0099
Keywords
Interfacial layer; HCl; Germanium; Germanium oxide; HF; X-ray photoelectron spectroscopy
Funding
- Ministry of Education
- Universiti Malaysia Sarawak [FRGS/TK04(02)/1082/2013(28)]
Ask authors/readers for more resources
Purpose - The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al2O3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al2O3 and Ge for HCl- and HF-last Ge surface. Design/methodology/approach - After wet chemical cleaning with HCl or HF, Al2O3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400 degrees C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings - It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF- and HCl- last starting surface. Originality/value - The novelty of this work is to investigate the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available