Journal
MICROELECTRONIC ENGINEERING
Volume 173, Issue -, Pages 13-21Publisher
ELSEVIER
DOI: 10.1016/j.mee.2017.03.008
Keywords
Bonding; Temporary; Adhesive; 3D integration; Adherence
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This paper concerns the study of a temporary bonding process: 3M (TM) Wafer Support System. This process is dedicated to the handling of thin silicon wafers with a glass carrier bonded with a UV curable polymer. The dismounting process is achieved after a laser treatment Firstly, the 300 mm bonding process leads to a very homogeneous bonded structure without any bonding defects. The morphology of the bonded structure is mainly dependent of the morphology of the glass. Secondly this process is also compatible with a back - grinding process and the thinned silicon structure can be processed up to 250 degrees C. When using a blank silicon wafer, the 3M (TM) dismounting process (laser and peeling) leads to a silicon thin wafer without any cracks, chippings or adhesive traces. Finally the laser process can be removed from the debonding steps and a single mechanical dismounting process can be used. (C) 2017 Elsevier B.V. All rights reserved.
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