Journal
MICROELECTRONIC ENGINEERING
Volume 178, Issue -, Pages 190-193Publisher
ELSEVIER
DOI: 10.1016/j.mee.2017.04.045
Keywords
MoS2; Top-gated transistor; HfO2; Al2O3; High-k; Substrate
Categories
Funding
- US/Ireland R&D Partnership (UNITE) under the NSF award [ECCS-1407765]
- center for Low Energy Systems Technology (LEAST), one of six SRC STARnet Centers - MARCO
- center for Low Energy Systems Technology (LEAST), one of six SRC STARnet Centers - DARPA
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1407765] Funding Source: National Science Foundation
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High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of-69 mV/dec and a -10x increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias. (C) 2017 Elsevier B.V. All rights reserved.
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