Journal
MICROELECTRONIC ENGINEERING
Volume 168, Issue -, Pages 37-40Publisher
ELSEVIER
DOI: 10.1016/j.mee.2016.10.007
Keywords
Lithium Niobate; Memristor; Neuromorphic computing
Ask authors/readers for more resources
This paper describes the fabrication and characterization of Lithium Niobate (LiNbO3) memristor devices that have the ability to be tuned to a specific resistance state within a continuous resistance range. This is essential for programming neuromorphic systems based on memristor crossbars in order to achieve best deep learning capability. The memristor devices were formed using a 42 nm layer of LiNbO3 sandwiched between two metal electrodes. I-V curves demonstrate a typical and repeatable memristor characteristic from - 3 V to 3 V. Such devices have a continuous resistance range that has a maximum to minimum resistance ratio of about 100, and the ability to program intermediate resistance states. The results also show the ability to read the device symmetrically with a positive or negative voltage, and strong data retention after the programming phase. (C) 2016 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available