Journal
INDIAN JOURNAL OF PHYSICS
Volume 93, Issue 1, Pages 33-39Publisher
INDIAN ASSOC CULTIVATION SCIENCE
DOI: 10.1007/s12648-018-1274-5
Keywords
Solar cells; Bifacial cells; PERC technology; Silicon; Modeling and simulation
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Funding
- Semiconductor Laboratory, Kuwait University [GE01/08]
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This paper investigates the outdoor bifacial n-type silicon passivated emitter rear cell (PERC) and the influence of the contact resistance and temperature dependence on the output properties by using Silvaco TCAD tools. PERC is considered as an effective solution to increase the energy yield and reduce the levelized costs of electricity in a real PV system. This paper presents a comparison between bifacial n-PERC and standard n-PERC cell technology. This investigation at 300 K leads to achieve the following results J(sc) = 43.93 mA/cm(2), V-oc = 0.763 V, FF = 80.44%, P-max = 269.77 W/m(-2), and eta = 26.97% for AM1.5 spectra and with only 20% albedo which are close to and improved with those found in different research works. This technology provides a better electrical control over the cell and thus leads to valuable improvements in photovoltaic devices performance.
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