4.8 Article

A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating

Journal

NANOSCALE
Volume 11, Issue 8, Pages 3710-3717

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c8nr07946c

Keywords

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Funding

  1. National Natural Science Foundation of China [51402064, 61274134]
  2. Beijing Natural Science Foundation [4173077]
  3. Fundamental Research Funds for the Central Universities [FRF-BR-16-018A, FRF-TP-17-022A1, FRF-UM-15-032, 06400071]
  4. USTB Start-up Program [06105033]
  5. Beijing Innovation and ResearchBase [Z161100005016095]
  6. Youth Innovation Promotion Association of Chinese Academy of Sciences [2015387]

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III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, largecapacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolution for future smart displays, high-resolution imaging, big-data optical information systems and so on.

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